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| CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1N4150 THRU 1N4448 HIGH SPEED SWITCHING DIODES VOLTAGE50-100V CURRENT0.15 to 0.2 A FEATURES *Silicon epitaxial planar diodes *Low power loss, high efficiency *Low lekage *Low forward voltagh *High speed switching *High current capability *High reliability DO-35 25.0MIN. L 25.0MIN. 0.52 2.0MAX. L: DO-34 DO-35 2.9 4.2 MECHANICAL DATA *Case:Glass sealed case *Lead: MIL-STD- 202E, Method 208 guaranteed *Polarity: Color band denotes cathode end *Mounting position: Any *Weight: 0.13 gram MAX. MAX. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum power dissipation tamb=25C Maximum Forward Voltage Maximum reverse current Maximum reverse recovery time Maximum junction capacitance Notes: VRRM Ptot VF IR trr CJ 1N4150 50 500 1.0/200 100/50 4.0 1N4151 75 500 1.0/50 50/50 2.0 4.0 1N4448 100 500 1.0/100 5000/75 4.0 units V mW V/mA nA/V nS pF 1-1N914A,1N914B is same as 1N914, except different forward voltage|: 1N914A-1.0/20 V/mA 1N914B-1.0/100 V/mA 2.Suffix "M" stands for "DO-34" package. (e.g.:1N4148M) PDF "pdfFactory Pro" www.fineprint.cn |
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